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SIRA99DP-T1-RE3

New Product
MOSFETs .

Manufacturer:

Mfr Part:
SIRA99DP-T1-RE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK 1212-8
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current195 A
Rds On - Drain-Source Resistance1.7 mOhms
Vgs - Gate-Source Voltage- 20 V, 16 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge172.5 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation104 W
Channel ModeEnhancement
TradenameTrenchFET
ConfigurationSingle
Fall Time16 ns
Product TypeMOSFETs
Rise Time19 ns
SeriesSIR
SubcategoryTransistors
Transistor Type1 P-Channel
Typical Turn-Off Delay Time64 ns
Typical Turn-On Delay Time23 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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