Reference Only

SIRA60DP-T1-UE3

MOSFETs N-Channel 30 V (D-S) MOSFET 150 C 0.94 m 10V 1.35 m 4.5V.

Manufacturer:

Mfr Part:
SIRA60DP-T1-UE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSO-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current100 A
Rds On - Drain-Source Resistance940 uOhms
Vgs - Gate-Source Voltage- 16 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.2 V
Qg - Gate Charge83 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation57 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time20 ns
Forward Transconductance - Min100 S
Product TypeMOSFETs
Rise Time45 ns
SeriesSiRA60DP
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time50 ns
Typical Turn-On Delay Time40 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Reel

(Minimum: 6,000 / Multiples: 1)
Quantity Unit PriceExt. Price
$0.70$4,200.00
Need more?
Contact Us