Reference Only

SIR570DP-T1-BE3

MOSFETs N-CHANNEL 150-V (D-S) MOSFET.

Manufacturer:

Mfr Part:
SIR570DP-T1-BE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSO-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage150 V
Id - Continuous Drain Current77.4 A
Rds On - Drain-Source Resistance7.9 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge46.9 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation104 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time21 ns
Product TypeMOSFETs
Rise Time16 ns
SeriesSiR570DP
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time29 ns
Typical Turn-On Delay Time17 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 35 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Each

(Minimum: 6,000 / Multiples: 1)
Quantity Unit PriceExt. Price
$1.16$6,960.00
Need more?