Reference Only

SIR470DP-T1-GE3

MOSFETs 40V Vds 20V Vgs PowerPAK SO-8.

Manufacturer:

Mfr Part:
SIR470DP-T1-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-SO-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage40 V
Id - Continuous Drain Current60 A
Rds On - Drain-Source Resistance1.9 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage1 V
Qg - Gate Charge155 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation104 W
Channel ModeEnhancement
TradenameTrenchFET, PowerPAK
PackagingReel
ConfigurationSingle
Fall Time9 ns
Forward Transconductance - Min190 S
Product TypeMOSFETs
Rise Time11 ns
SeriesSIR
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time50 ns
Typical Turn-On Delay Time16 ns
Part # AliasesSIR814DP-T1-GE3

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption Number7a
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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