Reference Only

SIR4411DP-T1-GE3

MOSFETs .

Manufacturer:

Mfr Part:
SIR4411DP-T1-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-SO-8
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage40 V
Id - Continuous Drain Current48.3 A
Rds On - Drain-Source Resistance11 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.3 V
Qg - Gate Charge79 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation56.8 W
Channel ModeEnhancement
TradenameTrenchFET
PackagingReel
ConfigurationSingle
Fall Time8 ns, 34 ns
Forward Transconductance - Min45 nC
Product TypeMOSFETs
Rise Time6 ns, 65 ns
SeriesSIR
SubcategoryTransistors
Transistor TypeTrenchFET Gen IV Power MOSFET
Typical Turn-Off Delay Time46 ns, 51 ns
Typical Turn-On Delay Time12 ns, 28 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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