Reference Only

SIHK050N65E-T1-GE3

MOSFETs .

Manufacturer:

Mfr Part:
SIHK050N65E-T1-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
Mounting StyleSMD/SMT
Package / CasePowerPAK 10 x 12
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current45 A
Rds On - Drain-Source Resistance48 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge117 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation278 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time11 ns
Forward Transconductance - Min16 S
Product TypeMOSFETs
Rise Time27 ns
SeriesSIHK
SubcategoryTransistors
Typical Turn-Off Delay Time98 ns
Typical Turn-On Delay Time33 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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