Reference Only

SIHFR1N60ATR-GE3

MOSFETs 600V Vds 30V Vgs DPAK (TO-252).

Manufacturer:

Mfr Part:
SIHFR1N60ATR-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseDPAK-3 (TO-252-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current1.4 A
Rds On - Drain-Source Resistance7 Ohms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge14 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation36 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time20 ns
Forward Transconductance - Min0.88 S
Product TypeMOSFETs
Rise Time14 ns
SeriesSIHFR
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time18 ns
Typical Turn-On Delay Time9.8 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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$0.343$1,372.00
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$0.325$7,800.00
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