Reference Only
SIHD2N80E-GE3
MOSFETs 800V Vds 30V Vgs DPAK (TO-252).
Datasheet
SIHD2N80E-GE3 DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Vishay | |
| Product Category | MOSFETs | |
| Technology | Si | |
| Mounting Style | SMD/SMT | |
| Package / Case | DPAK-3 (TO-252-3) | |
| Transistor Polarity | N-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 800 V | |
| Id - Continuous Drain Current | 2.8 A | |
| Rds On - Drain-Source Resistance | 2.38 Ohms | |
| Vgs - Gate-Source Voltage | 30 V | |
| Vgs th - Gate-Source Threshold Voltage | 4 V | |
| Qg - Gate Charge | 9.8 nC | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Pd - Power Dissipation | 62.5 W | |
| Channel Mode | Enhancement | |
| Packaging | Tube | |
| Configuration | Single | |
| Fall Time | 27 ns | |
| Product Type | MOSFETs | |
| Rise Time | 7 ns | |
| Series | SIHD E | |
| Subcategory | Transistors | |
| Transistor Type | 1 N-Channel | |
| Typical Turn-Off Delay Time | 19 ns | |
| Typical Turn-On Delay Time | 11 ns |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541290000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | Yes |
| REACH Substance Name | Lead (7439-92-1) |