Reference Only

SIHB6N80AE-GE3

MOSFETs .

Manufacturer:

Mfr Part:
SIHB6N80AE-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-263
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage800 V
Id - Continuous Drain Current5 A
Rds On - Drain-Source Resistance826 mOhms
Vgs - Gate-Source Voltage- 10 V, 10 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge22.5 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation78 W
Channel ModeEnhancement
Fall Time20 ns
Forward Transconductance - Min1.9 S
Product TypeMOSFETs
Rise Time10 ns
SeriesSIHB E
SubcategoryTransistors
Typical Turn-Off Delay Time16 ns
Typical Turn-On Delay Time12 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

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