Reference Only

SIHB180N60E-GE3

MOSFETs 600V Vds 30V Vgs D2PAK (TO-263).

Manufacturer:

Mfr Part:
SIHB180N60E-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD2PAK-3 (TO-263-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current19 A
Rds On - Drain-Source Resistance180 mOhms
Vgs - Gate-Source Voltage30 V
Vgs th - Gate-Source Threshold Voltage3 V
Qg - Gate Charge33 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation156 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time23 ns
Forward Transconductance - Min5.3 S
Product TypeMOSFETs
Rise Time49 ns
SeriesSIHB E
SubcategoryTransistors
Transistor Type1 N-Channel E-Series Power MOSFET
Typical Turn-Off Delay Time22 ns
Typical Turn-On Delay Time14 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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