Reference Only

SIA445EDJT-T1-GE3

MOSFETs -20V Vds 12V Vgs Thin PowerPAK SC-70.

Manufacturer:

Mfr Part:
SIA445EDJT-T1-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSC-70-6
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage20 V
Id - Continuous Drain Current12 A
Rds On - Drain-Source Resistance13.8 mOhms
Vgs - Gate-Source Voltage- 12 V, 12 V
Vgs th - Gate-Source Threshold Voltage1.2 V
Qg - Gate Charge69 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation19 W
Channel ModeEnhancement
TradenameTrenchFET
PackagingReel
ConfigurationSingle
Fall Time25 ns
Forward Transconductance - Min34 S
Product TypeMOSFETs
Rise Time25 ns
SeriesSIA
SubcategoryTransistors
Transistor Type1 P-Channel
Typical Turn-Off Delay Time50 ns
Typical Turn-On Delay Time25 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

0In Stock

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Lead Time: 9 Weeks
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Reel

(Minimum: 6,000 / Multiples: 1)
Quantity Unit PriceExt. Price
$0.227$1,362.00
$0.206$1,854.00
$0.183$4,392.00
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