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SI8916EDB-T6-E1

New Product
MOSFETs .

Manufacturer:

Mfr Part:
SI8916EDB-T6-E1

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseMicroFOOT-4
Transistor PolarityN-Channel
Number of Channels2 Channel
Vds - Drain-Source Breakdown Voltage20 V
Id - Continuous Drain Current2.5 A
Rds On - Drain-Source Resistance75 mOhms
Vgs - Gate-Source Voltage12 V
Vgs th - Gate-Source Threshold Voltage1.4 V
Qg - Gate Charge5.6 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation770 mW
Channel ModeEnhancement
ConfigurationDual
Fall Time15 ns
Forward Transconductance - Min15 S
Product TypeMOSFETs
Rise Time40 ns
SubcategoryTransistors
Transistor Type2 N-Channel
Typical Turn-Off Delay Time20 ns
Typical Turn-On Delay Time10 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541210095
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 89 Weeks
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$0.103$618.00
$0.088$792.00
$0.073$1,752.00
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