Reference Only

SI5429DU-T1-GE3

MOSFETs -30V Vds 20V Vgs PowerPAK ChipFET.

Manufacturer:

Mfr Part:
SI5429DU-T1-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-ChipFET-8
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current12 A
Rds On - Drain-Source Resistance12.2 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.2 V
Qg - Gate Charge63 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation31 W
Channel ModeEnhancement
TradenameTrenchFET
PackagingReel
ConfigurationSingle
Fall Time10 ns
Forward Transconductance - Min25 S
Product TypeMOSFETs
Rise Time25 ns
SeriesSI5
SubcategoryTransistors
Transistor Type1 P-Channel
Typical Turn-Off Delay Time31 ns
Typical Turn-On Delay Time35 ns
Part # AliasesSI5429DU-GE3

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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