Reference Only

SI3430DV-T1-GE3

MOSFETs 100V 2.4A 2.0W 170mohm @ 10V.

Manufacturer:

Mfr Part:
SI3430DV-T1-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTSOP-6
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current2.4 A
Rds On - Drain-Source Resistance170 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge8.2 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation2 W
Channel ModeEnhancement
TradenameTrenchFET
PackagingReel
ConfigurationSingle
Fall Time9 ns
Product TypeMOSFETs
Rise Time11 ns
SeriesSI3
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time16 ns
Typical Turn-On Delay Time9 ns
Part # AliasesSI3430DV-T1-BE3 SI3430DV-GE3

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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