Reference Only

SI2324BDS-T1-GE3

MOSFETs N-CHANNEL 100-V (D-S) MOSFET.

Manufacturer:

Mfr Part:
SI2324BDS-T1-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current1.9 A
Rds On - Drain-Source Resistance210 mOhms
Vgs - Gate-Source Voltage20 V
Vgs th - Gate-Source Threshold Voltage3 V
Qg - Gate Charge3.9 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation1.7 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time12 ns
Forward Transconductance - Min9 S
Product TypeMOSFETs
Rise Time25 ns
SeriesSOT-23
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time10 ns
Typical Turn-On Delay Time11 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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