Reference Only

SI1965DH-T1-E3

MOSFETs -12V Vds 8V Vgs SC70-6.

Manufacturer:

Mfr Part:
SI1965DH-T1-E3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-363-6
Transistor PolarityP-Channel
Number of Channels2 Channel
Vds - Drain-Source Breakdown Voltage12 V
Id - Continuous Drain Current1.3 A
Rds On - Drain-Source Resistance390 mOhms
Vgs - Gate-Source Voltage- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage400 mV
Qg - Gate Charge4.2 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation1.25 W
Channel ModeEnhancement
TradenameTrenchFET
PackagingReel
ConfigurationDual
Fall Time10 ns
Forward Transconductance - Min2.5 S
Product TypeMOSFETs
Rise Time27 ns
SeriesSI1
SubcategoryTransistors
Transistor Type2 P-Channel
Typical Turn-Off Delay Time15 ns
Typical Turn-On Delay Time12 ns
Part # AliasesSI1965DH-T1-BE3 SI1965DH-E3

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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