SG6612WNAMU03 ROHM Semiconductor

SG6612WNAMU03

IGBTs

Manufacturer:

Mfr Part:
SG6612WNAMU03

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryIGBTs
TechnologySi
Package / CaseDIE
Mounting StyleSMD/SMT
ConfigurationSingle
Collector- Emitter Voltage VCEO Max650 V
Collector-Emitter Saturation Voltage2.1 V
Maximum Gate Emitter Voltage30 V
Continuous Collector Current at 25 C50 A
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 175 C
Gate-Emitter Leakage Current200 nA
Product TypeIGBTs
SubcategoryTransistors
Part # AliasesSG6612WN

Export and Environmental Classification

AttributeDescription
HTS8541290095
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

Specification Sheets

EDA / CAD Models

Not Available Online

Need this part?
We can help
Contact a Sales Representative

Each

Pricing not available for this package type
Need pricing?