Reference Only

SCT2H12NYTB

End of Life
SiC MOSFETs N-Ch 1700V 4A 44W SiC Silicon Carbide

Manufacturer:

Mfr Part:
SCT2H12NYTB

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategorySiC MOSFETs
Mounting StyleSMD/SMT
Package / CaseTO-268-2
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1.7 kV
Id - Continuous Drain Current4 A
Rds On - Drain-Source Resistance1.5 Ohms
Vgs - Gate-Source Voltage- 6 V, + 22 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge14 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation44 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time74 ns
Forward Transconductance - Min400 mS
PackagingReel
Product TypeSiC MOSFETS
ProductMOSFET's
Rise Time21 ns
SeriesSCT2x
SubcategoryTransistors
TechnologySiC
Transistor Type1 N-Channel
Typical Turn-Off Delay Time35 ns
Typical Turn-On Delay Time16 ns
Part # AliasesSCT2H12NY

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

Not Available Online

Need this part?
We can help
Contact a Sales Representative

Reel

Pricing not available for this package type
Need pricing?