Reference Only

SCT2120AFC

Obsolete
SiC MOSFETs MOSFET650V 29 -220A Silicon Carbide SiC

Manufacturer:

Mfr Part:
SCT2120AFC

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategorySiC MOSFETs
Mounting StyleThrough Hole
Package / CaseTO-220AB-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current29 A
Rds On - Drain-Source Resistance120 mOhms
Vgs - Gate-Source Voltage- 6 V, + 22 V
Vgs th - Gate-Source Threshold Voltage1.6 V
Qg - Gate Charge61 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation165 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time19 ns
Forward Transconductance - Min2.7 S
PackagingTube
Product TypeSiC MOSFETS
ProductMOSFET's
Rise Time31 ns
SeriesSCT2x
SubcategoryTransistors
TechnologySiC
Transistor Type1 N-Channel
Typical Turn-Off Delay Time60 ns
Typical Turn-On Delay Time22 ns
Part # AliasesSCT2120AF

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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