Reference Only

SCT2080KEC

End of Life
SiC MOSFETs N-Ch MOSFET 1200V Silicon Carbide SiC

Manufacturer:

Mfr Part:
SCT2080KEC

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategorySiC MOSFETs
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1.2 kV
Id - Continuous Drain Current40 A
Rds On - Drain-Source Resistance80 mOhms
Vgs - Gate-Source Voltage- 6 V, + 22 V
Vgs th - Gate-Source Threshold Voltage1.6 V
Qg - Gate Charge106 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation262 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time22 ns
Forward Transconductance - Min3.7 S
PackagingTube
Product TypeSiC MOSFETS
Rise Time36 ns
SeriesSCT2x
SubcategoryTransistors
TechnologySiC
Typical Turn-Off Delay Time76 ns
Typical Turn-On Delay Time35 ns
Part # AliasesSCT2080KE

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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