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RJ1G12BGNTLL

End of Life
MOSFETs

Manufacturer:

Mfr Part:
RJ1G12BGNTLL

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-263AB-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage40 V
Id - Continuous Drain Current120 A
Rds On - Drain-Source Resistance1.86 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge165 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation178 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time130 ns
Forward Transconductance - Min60 S
Product TypeMOSFETs
Rise Time33 ns
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time230 ns
Typical Turn-On Delay Time40 ns
Part # AliasesRJ1G12BGN

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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