Reference Only

R5019ANX

MOSFETs

Manufacturer:

Mfr Part:
R5019ANX

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220FM-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage500 V
Id - Continuous Drain Current19 A
Rds On - Drain-Source Resistance240 mOhms
Vgs - Gate-Source Voltage30 V
Vgs th - Gate-Source Threshold Voltage4.5 V
Qg - Gate Charge55 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation50 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time100 ns
Forward Transconductance - Min6.5 S
Product TypeMOSFETs
Rise Time115 ns
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time165 ns
Typical Turn-On Delay Time40 ns

Export and Environmental Classification

AttributeDescription
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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