Reference Only
MMIX1X200N60B3
IGBTs SMPD IGBTs Power Device.
Datasheet
MMIX1X200N60B3 DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | IXYS | |
| Product Category | IGBTs | |
| Technology | Si | |
| Package / Case | SMDP-21 | |
| Mounting Style | SMD/SMT | |
| Configuration | Single | |
| Maximum Gate Emitter Voltage | - 20 V, 20 V | |
| Continuous Collector Current at 25 C | 223 A | |
| Pd - Power Dissipation | 625 W | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 175 C | |
| Series | MMIX1X200N60 | |
| Packaging | Tube | |
| Gate-Emitter Leakage Current | 200 nA | |
| Product Type | IGBT Transistors | |
| Subcategory | IGBTs |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8541900080 |
| TARIC | 8541900000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
0In Stock
Available For Backorder
Lead Time: 28 Weeks
Quantity
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Unit Price
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Ext. Price
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Tube
(Minimum: 300 / Multiples: 20)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| $38.44 | $11,532.00 |
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