Reference Only

IXYP10N65C3D1M

IGBTs .

Manufacturer:

Mfr Part:
IXYP10N65C3D1M

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Package / CaseTO-220-3
Mounting StyleThrough Hole
ConfigurationSingle
Collector- Emitter Voltage VCEO Max650 V
Collector-Emitter Saturation Voltage2.27 V
Maximum Gate Emitter Voltage- 20 V, 20 V
Continuous Collector Current at 25 C15 A
Pd - Power Dissipation53 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
PackagingTube
Continuous Collector Current Ic Max50 A
Gate-Emitter Leakage Current100 nA
Product TypeIGBT Transistors
SubcategoryIGBTs

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

0In Stock

Available For Backorder
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Tube

(Minimum: 300 / Multiples: 1)
Quantity Unit PriceExt. Price
$2.24$672.00
$1.87$935.00
$1.74$1,740.00
$1.63$4,075.00
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