Reference Only

IXTP2R4N50P

Obsolete
MOSFETs 2.4 Amps 500 V 3.5 Ohm Rds

Manufacturer:

Mfr Part:
IXTP2R4N50P

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage500 V
Id - Continuous Drain Current2.4 A
Rds On - Drain-Source Resistance3.75 Ohms
Vgs - Gate-Source Voltage- 30 V, 30 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation55 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time28 ns
Forward Transconductance - Min2.5 S
Product TypeMOSFETs
Rise Time29 ns
SeriesIXTP2R4N50
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time65 ns
Typical Turn-On Delay Time24 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

Not Available Online

Need this part?
We can help
Contact a Sales Representative

Tube

Pricing not available for this package type
Need pricing?