Reference Only

IXTP2N60P

Obsolete
MOSFETs 2.0 Amps 600 V 4.7 Ohm Rds

Manufacturer:

Mfr Part:
IXTP2N60P

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current2 A
Rds On - Drain-Source Resistance5.1 Ohms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge7 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation55 W
Channel ModeEnhancement
TradenamePolarHV
PackagingTube
ConfigurationSingle
Fall Time23 ns
Forward Transconductance - Min1.4 S
Product TypeMOSFETs
Rise Time20 ns
SeriesIXTP2N60
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time60 ns
Typical Turn-On Delay Time28 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

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