Reference Only
IXTA6N100D2
MOSFETs N-CH MOSFETS (D2) 1000V 6A.
Datasheet
IXTA6N100D2 DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | IXYS | |
| Product Category | MOSFETs | |
| Technology | Si | |
| Mounting Style | SMD/SMT | |
| Package / Case | TO-263AA-3 | |
| Transistor Polarity | N-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 1 kV | |
| Id - Continuous Drain Current | 6 A | |
| Rds On - Drain-Source Resistance | 2.2 Ohms | |
| Vgs - Gate-Source Voltage | 20 V | |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V | |
| Qg - Gate Charge | 95 nC | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Pd - Power Dissipation | 300 W | |
| Channel Mode | Depletion | |
| Packaging | Tube | |
| Configuration | Single | |
| Fall Time | 47 ns | |
| Forward Transconductance - Min | 2.6 S | |
| Product Type | MOSFETs | |
| Rise Time | 80 ns | |
| Series | IXTA6N100 | |
| Subcategory | Transistors | |
| Transistor Type | 1 N-Channel | |
| Typical Turn-Off Delay Time | 34 ns | |
| Typical Turn-On Delay Time | 25 ns |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541900000 |
| RoHS Compliant | RoHS Per Exemption RoHS Per Exemption |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | Yes |
| REACH Substance Name | Lead |
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