Reference Only

IXTA1R6N100D2

MOSFETs N-CH MOSFETS (D2) 1000V 800MA.

Manufacturer:

Mfr Part:
IXTA1R6N100D2

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD2PAK-3 (TO-263-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1 kV
Id - Continuous Drain Current1.6 A
Rds On - Drain-Source Resistance10 Ohms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage4.5 V
Qg - Gate Charge27 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation100 W
Channel ModeDepletion
PackagingTube
ConfigurationSingle
Fall Time41 ns
Forward Transconductance - Min0.65 S
Product TypeMOSFETs
Rise Time65 ns
SeriesIXTA1R6N100
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time34 ns
Typical Turn-On Delay Time27 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541900000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 27 Weeks
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(Minimum: 300 / Multiples: 1)
Quantity Unit PriceExt. Price
$2.27$681.00
$2.00$1,000.00
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