Reference Only

IXGT32N170

IGBTs 72 Amps 1700 V 3.3 V Rds.

Manufacturer:

Mfr Part:
IXGT32N170

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Package / CaseD3PAK-3 (TO-268-3)
Mounting StyleSMD/SMT
ConfigurationSingle
Collector- Emitter Voltage VCEO Max1.7 kV
Collector-Emitter Saturation Voltage3.3 V
Maximum Gate Emitter Voltage- 20 V, 20 V
Continuous Collector Current at 25 C75 A
Pd - Power Dissipation350 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
SeriesIXGT32N170
PackagingTube
Continuous Collector Current Ic Max200 A
Gate-Emitter Leakage Current100 nA
Height5.1 mm
Length16.05 mm
Product TypeIGBTs
SubcategoryTransistors
Width14 mm

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 31 Weeks
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Tube

(Minimum: 1 / Multiples: 1)
Quantity Unit PriceExt. Price
$37.14$37.14
$28.23$282.30
$26.25$2,625.00
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