Reference Only

IXGQ90N33TCD1

Obsolete
IGBTs G-series A,B,C

Manufacturer:

Mfr Part:
IXGQ90N33TCD1

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Package / CaseTO-3P
Mounting StyleThrough Hole
ConfigurationSingle
Collector- Emitter Voltage VCEO Max330 V
Collector-Emitter Saturation Voltage1.8 V
Maximum Gate Emitter Voltage- 20 V, 20 V
Continuous Collector Current at 25 C90 A
Pd - Power Dissipation200 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingTube
Gate-Emitter Leakage Current200 nA
Product TypeIGBT Transistors
SubcategoryIGBTs

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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