Reference Only

IXGQ50N60B4D1

Obsolete
IGBTs PT Trench IGBTs Power Device

Manufacturer:

Mfr Part:
IXGQ50N60B4D1

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Package / CaseTO-3P
Mounting StyleThrough Hole
ConfigurationSingle
Collector- Emitter Voltage VCEO Max600 V
Collector-Emitter Saturation Voltage1.4 V
Maximum Gate Emitter Voltage- 20 V, 20 V
Continuous Collector Current at 25 C100 A
Pd - Power Dissipation300 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
SeriesIXGQ50N60
PackagingTube
Continuous Collector Current Ic Max230 A
Gate-Emitter Leakage Current100 nA
Product TypeIGBT Transistors
SubcategoryIGBTs

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541900080
TARIC8541900000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

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