Reference Only

IXFN26N120P

Discrete Semiconductor Modules 26 Amps 1200V.

Manufacturer:

Mfr Part:
IXFN26N120P

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryDiscrete Semiconductor Modules
TechnologySi
Vgs - Gate-Source Voltage- 30 V, + 30 V
Mounting StyleScrew Mount
Package / CaseSOT-227-4
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
SeriesIXFN26N120
PackagingTube
ConfigurationSingle
Fall Time58 ns
Id - Continuous Drain Current23 A
Pd - Power Dissipation695 W
Product TypeDiscrete Semiconductor Modules
Rds On - Drain-Source Resistance460 mOhms
Rise Time55 ns
SubcategoryDiscrete Semiconductor Modules
TradenameHiPerFET
Transistor PolarityN-Channel
Typical Turn-Off Delay Time76 ns
Typical Turn-On Delay Time56 ns
Vds - Drain-Source Breakdown Voltage1.2 kV

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541500000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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