Reference Only
IXFN26N100P
Discrete Semiconductor Modules 26 Amps 1000V 0.39 Rds.
Datasheet
IXFN26N100P DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | IXYS | |
| Product Category | Discrete Semiconductor Modules | |
| Technology | Si | |
| Vgs - Gate-Source Voltage | - 30 V, + 30 V | |
| Mounting Style | Screw Mount | |
| Package / Case | SOT-227-4 | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Series | IXFN26N100 | |
| Packaging | Tube | |
| Configuration | Single | |
| Fall Time | 50 ns | |
| Id - Continuous Drain Current | 23 A | |
| Pd - Power Dissipation | 595 W | |
| Product Type | Discrete Semiconductor Modules | |
| Rds On - Drain-Source Resistance | 390 mOhms | |
| Rise Time | 45 ns | |
| Subcategory | Discrete Semiconductor Modules | |
| Tradename | HiPerFET | |
| Transistor Polarity | N-Channel | |
| Typical Turn-Off Delay Time | 72 ns | |
| Typical Turn-On Delay Time | 45 ns | |
| Vds - Drain-Source Breakdown Voltage | 1 kV |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541500000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
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