Reference Only

IXFH6N100

Not Recommended for New Designs
MOSFETs 1KV 6A

Manufacturer:

Mfr Part:
IXFH6N100

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1 kV
Id - Continuous Drain Current6 A
Rds On - Drain-Source Resistance2 Ohms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage4.5 V
Qg - Gate Charge88 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation180 W
Channel ModeEnhancement
TradenameHyperFET
PackagingTube
ConfigurationSingle
Fall Time60 ns
Forward Transconductance - Min6 S
Product TypeMOSFETs
Rise Time40 ns
SeriesHiPerFET
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time100 ns
Typical Turn-On Delay Time35 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541100000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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