Reference Only

IXFH60N20

Not Recommended for New Designs
MOSFETs 60 Amps 200V 0.033 Rds

Manufacturer:

Mfr Part:
IXFH60N20

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage200 V
Id - Continuous Drain Current60 A
Rds On - Drain-Source Resistance33 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation300 W
Channel ModeEnhancement
TradenameHyperFET
PackagingTube
ConfigurationSingle
Fall Time26 ns
Product TypeMOSFETs
Rise Time63 ns
SeriesIXFH60N20
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time85 ns
Typical Turn-On Delay Time38 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541500000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

Not Available Online

Need this part?
We can help
Contact a Sales Representative

Tube

Pricing not available for this package type
Need pricing?