Reference Only

IXFH150N20T

MOSFETs Trench HiperFETs Power MOSFETs.

Manufacturer:

Mfr Part:
IXFH150N20T

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage200 V
Id - Continuous Drain Current150 A
Rds On - Drain-Source Resistance15 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage3 V
Qg - Gate Charge177 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation890 W
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Product TypeMOSFETs
SeriesIXFH150N20
SubcategoryTransistors
Transistor Type1 N-Channel

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541900000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

Documents

EDA / CAD Models

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Lead Time: 34 Weeks
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