Reference Only

IXFA4N100P

MOSFETs 4 Amps 1000V.

Manufacturer:

Mfr Part:
IXFA4N100P

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD2PAK-3 (TO-263-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1 kV
Id - Continuous Drain Current4 A
Rds On - Drain-Source Resistance3.3 Ohms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage6 V
Qg - Gate Charge26 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation150 W
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Fall Time50 ns
Forward Transconductance - Min1.8 S
Product TypeMOSFETs
Rise Time36 ns
SeriesIXFA4N100
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time37 ns
Typical Turn-On Delay Time24 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541500000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameDechlorane plus; Dechlorane+; 1,6,7,8,9,14,15,16,17,17,18,18-dodecachloropentacyclo[12.2.1.16,9.02,1

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EDA / CAD Models

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Lead Time: 28 Weeks
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(Minimum: 300 / Multiples: 1)
Quantity Unit PriceExt. Price
$2.93$879.00
$2.55$1,275.00
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