Reference Only
IXFA3N120
MOSFETs 3 Amps 1200V 4.5 Rds.
Datasheet
IXFA3N120 DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | IXYS | |
| Product Category | MOSFETs | |
| Technology | Si | |
| Mounting Style | SMD/SMT | |
| Package / Case | D2PAK-3 (TO-263-3) | |
| Transistor Polarity | N-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 1.2 kV | |
| Id - Continuous Drain Current | 3 A | |
| Rds On - Drain-Source Resistance | 4.5 Ohms | |
| Vgs - Gate-Source Voltage | 20 V | |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V | |
| Qg - Gate Charge | 39 nC | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Pd - Power Dissipation | 200 W | |
| Channel Mode | Enhancement | |
| Tradename | HiPerFET | |
| Packaging | Tube | |
| Configuration | Single | |
| Fall Time | 18 ns | |
| Product Type | MOSFETs | |
| Rise Time | 15 ns | |
| Series | HiPerFET | |
| Subcategory | Transistors | |
| Transistor Type | 1 N-Channel | |
| Typical Turn-Off Delay Time | 32 ns | |
| Typical Turn-On Delay Time | 17 ns |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541290000 |
| RoHS Compliant | RoHS Per Exemption RoHS Per Exemption |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
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