Reference Only

IXBF55N300

IGBTs High Voltage High Gain BIMOSFET.

Manufacturer:

Mfr Part:
IXBF55N300

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Package / CaseISOPLUS i4-PAC-3
Mounting StyleThrough Hole
ConfigurationSingle
Collector- Emitter Voltage VCEO Max3 kV
Collector-Emitter Saturation Voltage2.7 V
Maximum Gate Emitter Voltage- 25 V, 25 V
Continuous Collector Current at 25 C86 A
Pd - Power Dissipation357 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
SeriesVery High Voltage
PackagingTube
Gate-Emitter Leakage Current200 nA
Product TypeIGBT Transistors
SubcategoryIGBTs
TradenameBIMOSFET

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

Not Available Online

Need this part?
We can help
Contact a Sales Representative

Tube

Pricing not available for this package type
Need pricing?