Reference Only

IMT4T108

Not Recommended for New Designs
Bipolar Transistors - BJT DUAL PNP 120V 50MA SOT-457

Manufacturer:

Mfr Part:
IMT4T108

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-457-6
Transistor PolarityPNP
ConfigurationDual
Collector- Emitter Voltage VCEO Max120 V
Collector- Base Voltage VCBO120 V
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage500 mV
Pd - Power Dissipation300 mW
Gain Bandwidth Product fT140 MHz
Maximum Operating Temperature+ 150 C
PackagingReel
Continuous Collector Current- 50 mA
DC Collector/Base Gain hfe Min180 at - 2 mA, - 6 V
DC Current Gain hFE Max820 at - 2 mA, - 6 V
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Part # AliasesIMT4

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541210075
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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