Reference Only

BSM600C12P3G201

Discrete Semiconductor Modules 1200V Vdss; 576A ID SiC Mod; SICSTD02.

Manufacturer:

Mfr Part:
BSM600C12P3G201

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryDiscrete Semiconductor Modules
ProductMOSFET-SiC SBD Modules
TypeSilicon Carbide (SiC) Module
TechnologySiC
Vf - Forward Voltage1.8 V
Vr - Reverse Voltage1.2 kV
Vgs - Gate-Source Voltage- 4 V, + 22 V
Mounting StyleScrew Mount
Package / CaseModule
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 150 C
SeriesBSMx
PackagingTray
ConfigurationChopper
Fall Time65 ns
Id - Continuous Drain Current600 A
Pd - Power Dissipation2.46 kW
Product TypeDiscrete Semiconductor Modules
Rise Time50 ns
SubcategoryDiscrete Semiconductor Modules
Transistor PolarityN-Channel
Typical Delay Time70 ns
Typical Turn-Off Delay Time240 ns
Typical Turn-On Delay Time70 ns
Vds - Drain-Source Breakdown Voltage1.2 kV
Vgs th - Gate-Source Threshold Voltage2.7 V

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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$1,200.00$4,800.00
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