Reference Only
BSM600C12P3G201
Discrete Semiconductor Modules 1200V Vdss; 576A ID SiC Mod; SICSTD02.
Datasheet
BSM600C12P3G201 DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | ROHM Semiconductor | |
| Product Category | Discrete Semiconductor Modules | |
| Product | MOSFET-SiC SBD Modules | |
| Type | Silicon Carbide (SiC) Module | |
| Technology | SiC | |
| Vf - Forward Voltage | 1.8 V | |
| Vr - Reverse Voltage | 1.2 kV | |
| Vgs - Gate-Source Voltage | - 4 V, + 22 V | |
| Mounting Style | Screw Mount | |
| Package / Case | Module | |
| Minimum Operating Temperature | - 40 C | |
| Maximum Operating Temperature | + 150 C | |
| Series | BSMx | |
| Packaging | Tray | |
| Configuration | Chopper | |
| Fall Time | 65 ns | |
| Id - Continuous Drain Current | 600 A | |
| Pd - Power Dissipation | 2.46 kW | |
| Product Type | Discrete Semiconductor Modules | |
| Rise Time | 50 ns | |
| Subcategory | Discrete Semiconductor Modules | |
| Transistor Polarity | N-Channel | |
| Typical Delay Time | 70 ns | |
| Typical Turn-Off Delay Time | 240 ns | |
| Typical Turn-On Delay Time | 70 ns | |
| Vds - Drain-Source Breakdown Voltage | 1.2 kV | |
| Vgs th - Gate-Source Threshold Voltage | 2.7 V |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8541290065 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
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