Reference Only

BSM400C12P3G202

Discrete Semiconductor Modules 1200V Vdss; 358A ID SiC Mod; SICSTD02.

Manufacturer:

Mfr Part:
BSM400C12P3G202

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryDiscrete Semiconductor Modules
ProductMOSFET-SiC SBD Modules
TypeSilicon Carbide (SiC) Module
TechnologySiC
Vf - Forward Voltage1.7 V
Vr - Reverse Voltage1.2 kV
Vgs - Gate-Source Voltage- 4 V, + 22 V
Mounting StyleScrew Mount
Package / CaseModule
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 150 C
SeriesBSMx
PackagingTray
ConfigurationChopper
Fall Time45 ns
Id - Continuous Drain Current400 A
Pd - Power Dissipation1.57 kW
Product TypeDiscrete Semiconductor Modules
Rise Time40 ns
SubcategoryDiscrete Semiconductor Modules
Transistor PolarityN-Channel
Typical Delay Time55 ns
Typical Turn-Off Delay Time180 ns
Typical Turn-On Delay Time55 ns
Vds - Drain-Source Breakdown Voltage1.2 kV
Vgs th - Gate-Source Threshold Voltage2.7 V

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541300080
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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