Reference Only

BSM080D12P2C008

Discrete Semiconductor Modules Half Bridge Module SiC DMOS & SBD 1200V.

Manufacturer:

Mfr Part:
BSM080D12P2C008

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryDiscrete Semiconductor Modules
ProductSiC MOSFET-SiC SBD Modules
TypeHalf Bridge
TechnologySiC
Vr - Reverse Voltage1.2 kV
Vgs - Gate-Source Voltage- 6 V, + 22 V
Mounting StyleScrew Mount
Package / CaseModule
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 150 C
SeriesBSMx
PackagingTray
ConfigurationHalf Bridge
Fall Time40 ns
Id - Continuous Drain Current80 A
Pd - Power Dissipation600 W
Product TypeDiscrete Semiconductor Modules
Rise Time30 ns
SubcategoryDiscrete Semiconductor Modules
Transistor PolarityN-Channel
Typical Turn-Off Delay Time80 ns
Typical Turn-On Delay Time20 ns
Vds - Drain-Source Breakdown Voltage1.2 kV
Vgs th - Gate-Source Threshold Voltage1.6 V

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

0In Stock

Available For Backorder
Lead Time: 27 Weeks
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Tray

(Minimum: 12 / Multiples: 1)
Quantity Unit PriceExt. Price
$318.74$3,824.88
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