Reference Only

2SA2007E

Not Recommended for New Designs
Bipolar Transistors - BJT Trans GP BJT PNP 60V 12A

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Mfr Part:
2SA2007E

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220FP-3
Transistor PolarityPNP
ConfigurationSingle
Maximum DC Collector Current12 A
Collector- Emitter Voltage VCEO Max60 V
Collector- Base Voltage VCBO100 V
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage300 mV
Maximum DC Collector Current12 A
Pd - Power Dissipation2 W
Gain Bandwidth Product fT80 MHz
Maximum Operating Temperature+ 150 C
Series2SA2007
PackagingBulk
Continuous Collector Current- 12 A
DC Collector/Base Gain hfe Min160
DC Current Gain hFE Max320
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290055
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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