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SIHK155N60EF-T1GE3

MOSFETs N-CH SINGLE 600V PPAK10X12

Manufacturer:

Mfr Part:
SIHK155N60EF-T1GE3

TTI Part:
SIHK155N60EF-T1GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current18 A
Rds On - Drain-Source Resistance136 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge25 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation156 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time17 ns
Forward Transconductance - Min9.2 S
Product TypeMOSFETs
Rise Time27 ns
SeriesSIHK EF
SubcategoryTransistors
Typical Turn-Off Delay Time28 ns
Typical Turn-On Delay Time20 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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