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SIHG052N60EF-GE3

MOSFETs EF Series Pwr MOSFET w/Fast Body Diode

Manufacturer:

Mfr Part:
SIHG052N60EF-GE3

TTI Part:
SIHG052N60EF-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current48 A
Rds On - Drain-Source Resistance52 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge67 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation278 W
Channel ModeEnhancement
PackagingReel
Product TypeMOSFETs
SeriesSIHG EF
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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Lead Time: 25 Weeks
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$4.55$227.50
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