Reference Only

IRFS11N50APBF

MOSFETs N-CH 500V HEXFET MOSFET D2-PA

Manufacturer:

Mfr Part:
IRFS11N50APBF

TTI Part:
IRFS11N50APBF

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD2PAK-3 (TO-263-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage500 V
Id - Continuous Drain Current11 A
Rds On - Drain-Source Resistance520 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge52 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation170 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Product TypeMOSFETs
SeriesIRFS
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290095
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption Number7a
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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Lead Time: 14 Weeks
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