Reference Only

IRFPE50PBF

MOSFETs N-CH 800V HEXFET MOSFET

Manufacturer:

Mfr Part:
IRFPE50PBF

TTI Part:
IRFPE50PBF

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage800 V
Id - Continuous Drain Current7.8 A
Rds On - Drain-Source Resistance1.2 Ohms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge200 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation190 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time39 ns
Forward Transconductance - Min5.6 S
Product TypeMOSFETs
Rise Time38 ns
SeriesIRFPE
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time120 ns
Typical Turn-On Delay Time19 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption Number7a
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

Documents

Technical Resources

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 76 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Tube

(Minimum: 500 / Multiples: 500)
Quantity Unit PriceExt. Price
$1.95$975.00
Need more?
Available Regional Inventory
100 available now at tti.com

My Notes

Sign into see notes.