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IRF530PBF

MOSFETs N-CH 100V HEXFET MOSFET

Manufacturer:

Mfr Part:
IRF530PBF

TTI Part:
IRF530PBF

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current14 A
Rds On - Drain-Source Resistance160 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge26 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation88 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time24 ns
Product TypeMOSFETs
Rise Time34 ns
SeriesIRF
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time23 ns
Typical Turn-On Delay Time10 ns
Part # AliasesIRF530PBF-BE3 IRF520SPBF

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290095
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption Number7a
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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Lead Time: 41 Weeks
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