Reference Only

IXGT10N170

IGBTs 20 Amps 1700 V 4 V Rds

Manufacturer:

Mfr Part:
IXGT10N170

TTI Part:
IXGT10N170

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Package / CaseD3PAK-3 (TO-268-3)
Mounting StyleSMD/SMT
ConfigurationSingle
Collector- Emitter Voltage VCEO Max1.7 kV
Collector-Emitter Saturation Voltage2.7 V
Maximum Gate Emitter Voltage- 20 V, 20 V
Continuous Collector Current at 25 C20 A
Pd - Power Dissipation110 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
SeriesIXGT10N170
PackagingTube
Continuous Collector Current Ic Max70 A
Gate-Emitter Leakage Current100 nA
Height5.1 mm
Length16.05 mm
Product TypeIGBTs
SubcategoryTransistors
Width14 mm

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 35 Weeks
Please adjust quantity to minimum and multiple values.
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Unit Price
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Tube

(Minimum: 300 / Multiples: 30)
Quantity Unit PriceExt. Price
$11.98$3,594.00
$11.45$5,839.50
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